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| e PTB 20195 150 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description The 20195 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 860 to 900 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. Class AB Characteristics 26 Volt, 900 MHz Characteristics - Output Power = 150 Watts Min - Collector Efficiency = 50% Min at 150 Watts - Gain = 9 dB Typ Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 200 Output Power (Watts) 160 120 80 201 95 LOT COD E VCC = 26 V 40 0 0 5 10 15 20 25 30 ICQ = 400 mA Total f = 900 MHz Input Power (Watts) Package 20224 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 40 60 4.0 25 330 1.89 -40 to +150 0.53 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20195 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 100 mA VBE = 0 V, IC = 100 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 25 55 3.5 20 Typ 30 70 5 50 Max -- -- -- 100 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 150 W, ICQ = 400 mA Total, f = 900 MHz) Collector Efficiency (VCC = 26 Vdc, Pout = 150 W, ICQ = 400 mA Total, f = 900 MHz) Intermodulation Distortion (VCC = 26 Vdc, Pout = 150 W(PEP), ICQ = 400 mA Total, f1 = 899.90 MHz, f2 = 900.00 MHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 150 W(PEP), ICQ = 400 mA Total, f = 900 MHz--all phase angles at frequency of test) Symbol Gpe Min 8 Typ 9 Max -- Units dB C 50 -- -- % IMD -- -32 -28 dBc -- -- 5:1 -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 150 W, ICQ = 400 mA Total) Z Source Z Load Frequency MHz 860 880 900 R 8.8 10.0 11.1 Z Source jX 13.3 13.5 13.7 R 4.1 3.5 2.8 Z Load jX -3.0 -3.0 -3.0 2 e Typical Performance Output Power vs. Supply Voltage 180 11 PTB 20195 Gain vs. Frequency (as measured in a broadband circuit) Output Power (Watts) 165 150 135 120 105 90 18 21 24 27 10 Gain (dB) 9 ICQ = 400 mA Total Pin = 20 W f = 900 MHz VCC = 26 V 8 ICQ = 400 mA Total Pout = 150 W 870 880 890 900 7 860 Vcc, Supply Voltage Frequency (MHz) Efficiency vs. Output Power 60 50 Intermodulation Distortion vs. Output Power -24 Efficiency (%) -28 IMD (dBc) 40 30 20 10 0 70 85 100 115 130 145 160 -32 VCC = 26 V ICQ = 400 mA Total f1 = 899.90 MHz f2 = 900.00 MHz VCC = 26 V ICQ = 400 mA Total f = 900 MHz -36 -40 60 75 90 105 120 135 150 Output Power (Watts) Output Power (Watts-PEP) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) 1996 Ericsson Inc. EUS/KR 1301-PTB 20195 Uen Rev. C 09-28-98 3 |
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